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| Datasheet File OCR Text: |
| process cpd98v schottky diode silicon high current schottky diode chip geometry process details principal device types cmush2-4 series gross die per 5 inch wafer 141,234 process epitaxial planar die size 11 x 11 mils die thickness 7.1 mils anode bonding pad area 5.4 x 5.4 mils top side metalization al - 30,000? back side metalization au - 12,000? www.centralsemi.com r2 (22-march 2010)
process cpd98v typical electrical characteristics www.centralsemi.com r2 (22-march 2010) |
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